Core polarization in solids: Formulation and application to semiconductors

Eric L. Shirley, Xuejun Zhu, and Steven G. Louie
Phys. Rev. B 56, 6648 – Published 15 September 1997
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Abstract

Accurate treatment of exchange and correlation effects involving core and valence electrons can be surprisingly important in solid-state calculations, especially for solids having elements with shallow core electrons, such as Ga and Ge. A local-density-approximation treatment of core-valence interactions leads to errors of 0.4eV for key features in the band structures of Ge and GaAs, even when valence-valence interactions are treated in a first-principles, quasiparticle approach. We apply a core-polarization-potential treatment of core-valence interactions within the framework of such quasiparticle calculations. Final results have errors of 0.1eV in band-energy differences.

  • Received 25 October 1996

DOI:https://doi.org/10.1103/PhysRevB.56.6648

©1997 American Physical Society

Authors & Affiliations

Eric L. Shirley

  • Optical Technology Division, National Institute of Standards and Technology, Gaithersburg, Maryland 20899

Xuejun Zhu and Steven G. Louie

  • Department of Physics, University of California, Berkeley, California 94720
  • Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720

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Vol. 56, Iss. 11 — 15 September 1997

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