Abstract
The atomic and electronic structure of hydrogen-vacancy complexes in GaN is investigated with pseudopotential-density-functional calculations. Calculated formation energies provide information about the likelihood of incorporation of these complexes in -type and -type material, and binding energies provide a measure for the dissociation energy. Vibrational frequencies yield a signature of the complex that should facilitate experimental identification. The behavior of hydrogenated nitrogen vacancies during annealing of acceptor-doped GaN is discussed, and a correlation with the frequently observed luminescence band around 420 nm is proposed.
- Received 27 June 1997
DOI:https://doi.org/10.1103/PhysRevB.56.R10020
©1997 American Physical Society