Local order in CVD diamond films : Comparative Raman, x-ray-diffraction, and x-ray-absorption near-edge studies

L. Fayette, B. Marcus, M. Mermoux, G. Tourillon, K. Laffon, P. Parent, and F. Le Normand
Phys. Rev. B 57, 14123 – Published 1 June 1998
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Abstract

We investigated the structural changes of carbon in diamond films deposited by microwave plasma-assisted chemical vapor deposition with various methane concentrations and substrate temperatures. They were studied by x-ray-absorption near-edge structure (XANES) at the C K edge. The results on composition and structure were compared to those given by Raman spectra, x-ray-diffraction patterns, and scanning electron microscopy. Unlike Raman spectroscopy, XANES at the C K edge is nearly equally sensitive whatever the nature of the carbon (diamond, graphite, amorphous,…) involved in these deposits. At T<950°C and [CH4]<2%, the C K edge spectra and the diffraction measurements both show that the films mainly consist of diamond, despite strong morphological modifications of the films. They all display the diamond characteristics. However a small amount of amorphous component (10%) is incorporated, while increasing the methane concentration and/or the substrate temperature. The presence of this amorphous carbon induces a drastic change in the Raman spectra with the appearance of new lines. At substrate temperatures higher than 900 °C and methane concentrations equal to 2%, a second characteristic modification of the Raman spectra then stems from the presence of a disordered graphitic phase. These amorphous and graphitic components exhibit quite characteristic Raman and XANES spectra. The nature of these amorphous and graphitic phases included into the diamond films is discussed.

  • Received 5 September 1997

DOI:https://doi.org/10.1103/PhysRevB.57.14123

©1998 American Physical Society

Authors & Affiliations

L. Fayette, B. Marcus, and M. Mermoux

  • Laboratoire d’Electrochimie et de Physico-Chimie des Matériaux et des Surfaces, UMR 5361 du CNRS, ENSEEG, INPG, Domaine Universitaire, Boîte Postale 75-F 38402 Saint-Martin d’Hères, France

G. Tourillon*, K. Laffon, and P. Parent

  • Laboratoire pour l’Utilisation du Rayonnement Electromagnétique, CNRS-CEA-MEN, Centre Universitaire de Paris Sud, Campus d’Orsay, Bâtiment 209D, F-91405 Orsay Cedex, France

F. Le Normand

  • Institut de Physique et Chimie des Matériaux de Strasbourg, Groupe Surfaces et Interfaces, Bâtiment 69, 23, rue du Loess, UMR 1046 du CNRS, F-67037 Strasbourg, France

  • *Present address: Laboratoire de Cristallographie, UPR 5031 CNRS, BP 166, 25, Avenue des Martyrs, 38042 Grenoble Cedex, France.
  • Author to whom correspondence should be addressed.

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Issue

Vol. 57, Iss. 22 — 1 June 1998

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