Exciton photoluminescence of hexagonal ZnO

T. V. Butkhuzi, T. G. Chelidze, A. N. Georgobiani, D. L. Jashiashvili, T. G. Khulordava, and B. E. Tsekvava
Phys. Rev. B 58, 10692 – Published 15 October 1998
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Abstract

Photoluminescence spectra of ZnO layers obtained by radical-beam epitaxy have been studied. Photoluminescence of free B and C excitons has been observed. At a high excitation level a band with λmax=363.1nm is observed. It is explained in terms of the proposed photoluminescence polariton mechanism in the Bn=1 exciton spectral region through biexcitons

  • Received 28 January 1998

DOI:https://doi.org/10.1103/PhysRevB.58.10692

©1998 American Physical Society

Authors & Affiliations

T. V. Butkhuzi and T. G. Chelidze

  • Department of Physics, Solid State Physics, Tbilisi State University, 3 Chavchavadze Avenue, Tbilisi, Georgia

A. N. Georgobiani

  • P. N. Lebedev Physical Institute, Academy of Sciences of Russia, Moscow, Russia

D. L. Jashiashvili, T. G. Khulordava, and B. E. Tsekvava

  • Department of Physics, Solid State Physics, Tbilisi State University, 3 Chavchavadze Avenue, Tbilisi, Georgia

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Issue

Vol. 58, Iss. 16 — 15 October 1998

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