Electronic structure of tin monochalcogenides from SnO to SnTe

I. Lefebvre, M. A. Szymanski, J. Olivier-Fourcade, and J. C. Jumas
Phys. Rev. B 58, 1896 – Published 15 July 1998
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Abstract

The family of tin monochalcogenides (SnX, X=O, S, Se, or Te) is calculated in order to point out trends in properties. Electronic structures are calculated from density functional theory pseudopotential and tight-binding theories. Resulting densities of states present similar features. Calculated Sn(5s) populations and charge-density contours are shown to be consistent with the presence of a lone pair. The lone pair is also studied from Mössbauer spectroscopy, which points out the particular case of SnO.

  • Received 12 January 1998

DOI:https://doi.org/10.1103/PhysRevB.58.1896

©1998 American Physical Society

Authors & Affiliations

I. Lefebvre* and M. A. Szymanski

  • IEMN (UMR 9929 CNRS), Avenue Poincaré, Cité Scientifique, Boîte Postale 69, 59652 Villeneuve d’Ascq Cedex, France

J. Olivier-Fourcade and J. C. Jumas

  • LPMC (UMR 5617 CNRS)-Université Montpellier II, place Eugene Bataillon, 34095 Montpellier Cedex 5, France

  • *Electronic address: ile@isen.fr

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Vol. 58, Iss. 4 — 15 July 1998

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