Scaling properties of InAs/GaAs self-assembled quantum dots

Y. Ebiko, S. Muto, D. Suzuki, S. Itoh, H. Yamakoshi, K. Shiramine, T. Haga, K. Unno, and M. Ikeda
Phys. Rev. B 60, 8234 – Published 15 September 1999
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Abstract

We studied the scaling law for volume distribution of the self-assembled quantum dots grown by molecular-beam epitaxy of the Stranski-Krastanow mode. The scaling law was found to hold regardless of the annealing time and growth temperature. Also, we found the scaling law for the pair distribution of self-assembled quantum dots. Both the volume distribution and pair distribution agreed with the scaling functions for two-dimensional submonolayer homoepitaxy model with critical cluster size i=1, which excludes adatom detachment from clusters.

  • Received 21 April 1999

DOI:https://doi.org/10.1103/PhysRevB.60.8234

©1999 American Physical Society

Authors & Affiliations

Y. Ebiko, S. Muto, D. Suzuki, S. Itoh, H. Yamakoshi, K. Shiramine, and T. Haga

  • Department of Applied Physics, Hokkaido University, N13 W8 Kitaku, Sapporo 060-8628, Japan

K. Unno and M. Ikeda

  • Division of Electronic and Information Engineering, Hokkaido University, N13 W8 Kitaku, Sapporo 060-8628, Japan

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Vol. 60, Iss. 11 — 15 September 1999

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