Impurity-induced modes of Mg, As, Si, and C in hexagonal and cubic GaN

G. Kaczmarczyk, A. Kaschner, A. Hoffmann, and C. Thomsen
Phys. Rev. B 61, 5353 – Published 15 February 2000
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Abstract

We present a cluster-model calculation of local vibrational modes in hexagonal GaN using the valence-force model of Keating and Kane with valence-force parameters fitted to Raman and neutron-scattering experiments. We used the scaling-factor approximation to describe the interatomic forces of the central defect atom. For hexagonal GaN:Mg we find three modes at 136, 262, and 656 cm1 in good agreement with experiments. For cubic GaN:As the isolated impurity atom gives us local modes at 95, 125, 151, and 250 cm1, which were observed as sharp lines in the experiment. For Si and C defects, for which local modes have not yet been reported, a similar choice of scaling factor as for Mg and As leads to modes that strongly hybridize with the host phonons.

  • Received 26 March 1999

DOI:https://doi.org/10.1103/PhysRevB.61.5353

©2000 American Physical Society

Authors & Affiliations

G. Kaczmarczyk, A. Kaschner, A. Hoffmann, and C. Thomsen

  • Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstrasse 36, 10623 Berlin, Germany

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Vol. 61, Iss. 8 — 15 February 2000

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