Abstract
The submonolayer growth by molecular beam epitaxy of InAs on the GaAs(001)- surface has been studied using rapid-quench scanning tunneling microscopy. InAs islands exhibiting the reconstruction are formed and show remarkably similar characteristics to GaAs submonolayer homoepitaxy on this surface. Detailed analysis of the islands indicates that strain plays a negligible role in their nucleation, and the reconstruction dominates both island growth and island anisotropy.
- Received 11 January 2000
DOI:https://doi.org/10.1103/PhysRevB.61.R10551
©2000 American Physical Society