Electron-energy-loss spectroscopy characterization of the sp2 bonding fraction within carbon thin films

A. J. Papworth, C. J. Kiely, A. P. Burden, S. R. P. Silva, and G. A. J. Amaratunga
Phys. Rev. B 62, 12628 – Published 15 November 2000
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Abstract

When using electron-energy-loss spectroscopy (EELS) to quantify the sp2/sp3 bonding fraction in thin film carbon, the spectrum taken from the film must be compared to that of a suitable known standard. In contrast to the work of Berger [S. D. Berger and D. R. McKenzie, Philos. Mag. Lett. 57, 285 (1988)], C60 fullerite is used in this work as the standard since highly oriented pyrolytic graphite (HOPG) is highly anisotropic, and can therefore lead to preferential orientation effects in EELS. It was found that C60 had a shoulder on the high-energy side of the 1sπ* peak, which was centered at 287 eV. In theory, many Gaussian peaks can be fitted to the near edge structure (NES) of the energy-loss spectrum. In practice, we show that only three, centered at energies of 285, 287, and 293 eV, are necessary for semiquantitative analysis. The 285 eV peak is indicative of the sp2 bonding fraction; the second peak at 287 eV is attributed to molecular structure within the sample; the third at 293 eV is determined by sp3 bonding contributions in the sample. We show that by fitting these three peaks to C60 fullerite and evaporated amorphous carbon (a-C), that the a-C has a 0.99sp2 bonding fraction compared with the C60 fullerite standard. The importance of considering the 287 eV peak in highly sp2 bonded amorphous carbon is further illustrated by analysis of a-C:H:N thin films.

  • Received 9 April 1999

DOI:https://doi.org/10.1103/PhysRevB.62.12628

©2000 American Physical Society

Authors & Affiliations

A. J. Papworth1,2, C. J. Kiely2, A. P. Burden3, S. R. P. Silva3,*, and G. A. J. Amaratunga4

  • 1Department Electrical and Electronic Engineering, University of Liverpool, Liverpool, L69 3GJ, United Kingdom
  • 2Department of Engineering, Materials Science and Engineering, University of Liverpool, Liverpool, L69 3BX, United Kingdom
  • 3School of Electronic Engineering, University of Surrey, Guildford, Surrey, GU2 5XH, United Kingdom
  • 4Department of Engineering, University of Cambridge, Cambridge, CB2 1PZ, United Kingdom

  • *Author to whom correspondence should be sent.

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Vol. 62, Iss. 19 — 15 November 2000

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