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Relaxation bottleneck and its suppression in semiconductor microcavities

A. I. Tartakovskii, M. Emam-Ismail, R. M. Stevenson, M. S. Skolnick, V. N. Astratov, D. M. Whittaker, J. J. Baumberg, and J. S. Roberts
Phys. Rev. B 62, R2283(R) – Published 15 July 2000
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Abstract

A polariton relaxation bottleneck is observed in angle-resolved measurements of photoluminescence emission from a semiconductor microcavity. For low power laser excitation, low k polariton states are found to have a very small population relative to those at high k. The bottleneck is found to be strongly suppressed at higher powers in the regime of superlinear emission of the lower polariton states. Evidence for the important role of carrier-carrier scattering in suppression of the bottleneck is presented.

  • Received 6 March 2000

DOI:https://doi.org/10.1103/PhysRevB.62.R2283

©2000 American Physical Society

Authors & Affiliations

A. I. Tartakovskii1,2, M. Emam-Ismail2, R. M. Stevenson2, M. S. Skolnick2, V. N. Astratov2, D. M. Whittaker3, J. J. Baumberg4, and J. S. Roberts5

  • 1Institute of Solid State Physics, RAS, 142432 Chernogolovka, Russia
  • 2Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH, United Kingdom
  • 3Toshiba Research Europe Ltd., Cambridge CB4 4WE, United Kingdom
  • 4Department of Physics and Astronomy, University of Southampton, Southampton SO17 1BJ, United Kingdom
  • 5Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield S1 3JD, United Kingdom

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Vol. 62, Iss. 4 — 15 July 2000

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