Optical functions and electronic structure of CuInSe2, CuGaSe2, CuInS2, and CuGaS2

M. I. Alonso, K. Wakita, J. Pascual, M. Garriga, and N. Yamamoto
Phys. Rev. B 63, 075203 – Published 30 January 2001
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Abstract

We report on the complex dielectric tensor components of four chalcopyrite semiconductors in an optical energy range (1.4–5.2 eV, from 0.9 eV for CuInSe2) determined at room temperature by spectroscopic ellipsometry. Our results were obtained on single crystals of CuInSe2, CuGaSe2, CuInS2, and CuGaS2. Values of refractive indices n, extinction coefficients k, and normal-incidence reflectivity R in the two different polarizations are given and compared with earlier data where available. We analyze in detail the structures of the dielectric function observed in the studied energy region. Critical-point parameters of electronic transitions are obtained from a fitting of numerically calculated second-derivative spectra d2ɛ(ω)/dω2. Experimental energies and polarizations are discussed on the basis of published band-structure calculations.

  • Received 28 July 2000

DOI:https://doi.org/10.1103/PhysRevB.63.075203

©2001 American Physical Society

Authors & Affiliations

M. I. Alonso1,*, K. Wakita2, J. Pascual3, M. Garriga1, and N. Yamamoto2

  • 1Institut de Ciència de Materials de Barcelona, CSIC, Campus de la UAB, 08193 Bellaterra, Spain
  • 2Department of Physics and Electronics, College of Engineering, Osaka Prefecture University, Gakuen-cho 1-1, Sakai, Osaka 599-8531, Japan
  • 3Departament de Física, UAB, and Institut de Ciència de Materials de Barcelona, CSIC, 08193 Bellaterra, Spain

  • *Electronic address: Isabel.Alonso@icmab.es

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Vol. 63, Iss. 7 — 15 February 2001

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