Ideal unreactive metal/semiconductor interfaces: The case of <span class="aps-inline-formula"><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><mi mathvariant="normal">Z</mi><mi mathvariant="normal">n</mi><mo>/</mo><mi mathvariant="normal">Z</mi><mi mathvariant="normal">n</mi><mi mathvariant="normal">S</mi><mi mathvariant="normal">e</mi><mo>(</mo><mn>001</mn><mo>)</mo><mn></mn></math></span>

S. Rubini; E. Pelucchi; M. Lazzarino; D. Kumar; A. Franciosi; C. Berthod; N. Binggeli; A. Baldereschi

doi:10.1103/PhysRevB.63.235307

Ideal unreactive metal/semiconductor interfaces: The case of $Z n / Z n S e (001)$

S. Rubini, E. Pelucchi, M. Lazzarino, D. Kumar, A. Franciosi, C. Berthod, N. Binggeli, and A. Baldereschi

Phys. Rev. B 63, 235307 – Published 18 May 2001

Abstract

Zn/ZnSe(001) interfaces fabricated by metal deposition at room temperature onto ZnSe(001) $c (2 \times 2),$ $2 \times 1,$ and $1 \times 1$ surfaces were studied by means of x-ray photoemission spectroscopy and current-voltage and capacitance-voltage measurements. All junctions exhibited an ideal unreactive behavior and an identical Schottky barrier height of 1.85 eV (for p-type conduction). Ab initio pseudopotential calculations for model interface configurations provide a microscopic explanation of the different behavior of Zn/ZnSe junctions as compared to Al/ZnSe and Au/ZnSe junctions.

Received 21 December 2000

DOI:https://doi.org/10.1103/PhysRevB.63.235307

Authors & Affiliations

S. Rubini, E. Pelucchi, M. Lazzarino, D. Kumar^*, and A. Franciosi^†

Laboratorio Nazionale TASC-INFM, Area Science Park, Building MM, S.S. 14, Km. 163.5, I-34012 Trieste, Italy

C. Berthod^‡, N. Binggeli, and A. Baldereschi^§

Institut de Physique Appliquée, Ecole Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland

^*Present address: Electronic Science Department, Kurukshetra University, 136119 India.
^†Also with Dipartimento di Fisica, Università di Trieste, I-34127 Trieste, Italy.
^‡Present address: DPMC, Université de Genève, 24 Quai Ernest-Ansermet, 1221 Genève 4, Switzerland.
^§Also with Dipartimento di Fisica Teorica and INFM, Università di Trieste, I-34014 Trieste, Italy.

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Vol. 63, Iss. 23 — 15 June 2001

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Physical Review B

covering condensed matter and materials physics