Pairing near the Mott insulating limit

Qiang-Hua Wang, Jung Hoon Han, and Dung-Hai Lee
Phys. Rev. B 65, 054501 – Published 27 December 2001
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Abstract

The nanometer-scale gap inhomogeneity revealed by recent scanning tunnel microscope images of Bi2Sr2CaCu2O8+x (BSCCO) surface suggests that the “gap coherence length” is of that order. Thus a robust pairing gap can develop despite the poorly screened Coulomb interaction. This can be taken as an evidence that the pairing in high-Tc materials hardly affects the charge correlation and hence occurs primarily among the spin degrees of freedom. We provide theoretical support for this point of view.

  • Received 12 June 2001

DOI:https://doi.org/10.1103/PhysRevB.65.054501

©2001 American Physical Society

Authors & Affiliations

Qiang-Hua Wang1,2, Jung Hoon Han1, and Dung-Hai Lee1

  • 1Department of Physics, University of California at Berkeley, Berkeley, California 94720
  • 2Physics Department and National Laboratory of Solid State Microstructures, Institute for Solid State Physics, Nanjing University, Nanjing 210093, China

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Issue

Vol. 65, Iss. 5 — 1 February 2002

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