Calorimetry of hydrogen desorption from a-Si nanoparticles

J. Farjas, D. Das, J. Fort, P. Roura, and E. Bertran
Phys. Rev. B 65, 115403 – Published 15 February 2002; Erratum Phys. Rev. B 68, 209901 (2003)
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Abstract

The process of hydrogen desorption from amorphous silicon (a-Si) nanoparticles grown by plasma-enhanced chemical vapor deposition (PECVD) has been analyzed by differential scanning calorimetry (DSC), mass spectrometry, and infrared spectroscopy, with the aim of quantifying the energy exchanged. Two exothermic peaks centered at 330 and 410°C have been detected with energies per H atom of about 50 meV. This value has been compared with the results of theoretical calculations and is found to agree with the dissociation energy of Si-H groups of about 3.25 eV per H atom, provided that the formation energy per dangling bond in a-Si is about 1.15 eV. It is shown that this result is valid for a-Si:H films, too.

  • Received 11 July 2001

DOI:https://doi.org/10.1103/PhysRevB.65.115403

©2002 American Physical Society

Erratum

Erratum: Calorimetry of hydrogen desorption from a-Si nanoparticles [Phys. Rev. B 65, 115403 (2002)]

J. Farjas, D. Das, J. Fort, P. Roura, and E. Bertran
Phys. Rev. B 68, 209901 (2003)

Authors & Affiliations

J. Farjas1, D. Das2, J. Fort1, P. Roura1, and E. Bertran3

  • 1GRMT, Departament de Física, Universitat de Girona, Campus Montilivi, Edif.PII, E17071-Girona, Catalonia, Spain
  • 2Department of Physics, Ramakrishna Mission College, Narendrapur IY3508, West Bengal, India
  • 3FEMAN, Departament de Física Aplicada i Optica, Universitat de Barcelona, Diagonal 647, 4a planta, E08028-Barcelona, Catalonia, Spain

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Issue

Vol. 65, Iss. 11 — 15 March 2002

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