Ferromagnetism in Mn-doped Ge

Sunglae Cho, Sungyoul Choi, Soon Cheol Hong, Yunki Kim, John B. Ketterson, Bong-Jun Kim, Y. C. Kim, and Jung-Hyun Jung
Phys. Rev. B 66, 033303 – Published 16 July 2002
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Abstract

We have successfully fabricated highly (up to 6%) Mn-doped bulk Ge single crystals. The lattice constant increases linearly with Mn concentration due to the larger Mn atomic radius compared with Ge, strongly indicating that Mn ions are being incorporated into the host Ge lattice. Alloys with lower Mn concentrations showed paramagnetism due to localized magnetic ions. Ge0.94Mn0.06 showed ferromagnetic ordering at ∼285 K, as determined from temperature-dependent magnetization and resistance measurements. The coersive field was 1260 Oe at 250 K.

  • Received 23 January 2002
  • Accepted 23 January 2002

DOI:https://doi.org/10.1103/PhysRevB.66.033303

©2002 American Physical Society

Authors & Affiliations

Sunglae Cho, Sungyoul Choi, and Soon Cheol Hong

  • Department of Physics, University of Ulsan, Ulsan, 680-749, South Korea

Yunki Kim and John B. Ketterson

  • Department of Physics & Astronomy, Northwestern University, Evanston, Illinois 60208

Bong-Jun Kim and Y. C. Kim

  • Department of Physics, Pusan National University, Busan, 609-735, South Korea

Jung-Hyun Jung

  • Department of Physics, Pukyong National University, Busan, 609-737, South Korea

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Vol. 66, Iss. 3 — 15 July 2002

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