Strong effective suppression of electron-lattice interaction in the photoexcited states of halogen-bridged Ni complexes as one-dimensional Mott insulators

K. Iwano, M. Ono, and H. Okamoto
Phys. Rev. B 66, 235103 – Published 10 December 2002
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Abstract

We performed luminescence measurements in one-dimensional Mott insulators of halogen(X)-bridged Ni compounds: [Ni(chxn)2X]Y2((X,Y)=(Br,Br),(Cl,Cl),(Cl,NO3)). For all three compounds, we observe luminescence bands that have a small Stokes shift ES of less than 0.05 eV. To understand such small values of ES, we applied an extended Peierls-Hubbard model to investigate lattice relaxation in the photoexcited states. The results demonstrate a different mechanism: a strong effective suppression of the electron-lattice interaction can occur by combining a basic property of Mott insulators and the present type of electron-lattice interaction. We argue that the negligible values of ES and the small widths of the absorption spectra can be explained by this mechanism.

  • Received 2 August 2002

DOI:https://doi.org/10.1103/PhysRevB.66.235103

©2002 American Physical Society

Authors & Affiliations

K. Iwano1, M. Ono2, and H. Okamoto2,3

  • 1Graduate University for Advanced Studies, Institute of Materials Structure Science, KEK, 1-1 Oho, Tsukuba 305-0801, Japan
  • 2Department of Advanced Materials Science, University of Tokyo, Tokyo 113-0033, Japan
  • 3National Institute of Advanced Industrial Science and Technology (AIST), Correlated Electron Research Center (CERC), Tsukuba 305-0046, Japan

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Vol. 66, Iss. 23 — 15 December 2002

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