Atomic resolution imaging and frequency versus distance measurements on NiO(001) using low-temperature scanning force microscopy

R. Hoffmann; M. A. Lantz; H. J. Hug; P. J. A. van Schendel; P. Kappenberger; S. Martin; A. Baratoff; H.-J. Güntherodt

doi:10.1103/PhysRevB.67.085402

Atomic resolution imaging and frequency versus distance measurements on NiO(001) using low-temperature scanning force microscopy

R. Hoffmann, M. A. Lantz, H. J. Hug, P. J. A. van Schendel, P. Kappenberger, S. Martin, A. Baratoff, and H.-J. Güntherodt

Phys. Rev. B 67, 085402 – Published 5 February 2003

Abstract

Atomically resolved scanning force microscopy images and force versus distance measurements at low temperatures on a cleaved NiO (001) single crystal are reported. The force-distance data are well modeled with a capacitive force in the distance range of 0.5 to 20 nm. The residual forces at smaller tip-sample distances show a maximum attraction of 2.3 nN and decay within 0.2 nm. They show a steplike behavior associated with an increase in dissipation signal. This steplike behavior can be explained by interaction of more than one atom of the tip or of the surface.

Received 26 March 2002

DOI:https://doi.org/10.1103/PhysRevB.67.085402

Authors & Affiliations

R. Hoffmann^1,*, M. A. Lantz², H. J. Hug¹, P. J. A. van Schendel¹, P. Kappenberger¹, S. Martin¹, A. Baratoff¹, and H.-J. Güntherodt¹

¹Institute of Physics, University of Basel, Klingelbergstrasse 82, CH-4056 Basel, Switzerland
²IBM Research, Zürich Research Laboratory, Säumerstrasse 4, CH-8803 Rüschlikon, Switzerland

^*Present address: McGill University, Physics Department, Rutherford Building, 3600 rue University, Montréal, Québec H3A 2T8, Canada.

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Vol. 67, Iss. 8 — 15 February 2003

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