Bond-Charge Calculation of Nonlinear Optical Susceptibilities for Various Crystal Structures

B. F. Levine
Phys. Rev. B 7, 2600 – Published 15 March 1973; Erratum Phys. Rev. B 8, 4046 (1973)
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Abstract

A simple localized-bond-charge model for the calculation of nonlinear optical susceptibilities is presented. We find that there are three important contributions to the nonlinearity, namely, the bond ionicity, the difference in atomic radii of the bonded atoms, and d-electron contributions. By including these effects we are able with one simple theory to accurately treat a wide variety of different types of compounds including AIIIBV (e.g., GaAs, GaP, InSb), AIIBVI (e.g., ZnS, ZnO, BeO), AIBVII (e.g., CuCl, CuBr, CuI), AIVB2VI (e.g., SiO2), multibond crystals [e.g., AIBIIIC2VI (LiGaO2, AgGaS2, CuInS2, CuGaSe2), AIIBIVC2V (CdGeP2, CdGeAs2, ZnGeP2), AIIIBVC4VI (AIPO4), also KH2PO4], highly anisotropic crystals (e.g., HgS, Se, Te), as well as ferroelectrics (e.g., LiNbO3, Ba2NaNb5O15, LiTaO3).

  • Received 17 August 1972

DOI:https://doi.org/10.1103/PhysRevB.7.2600

©1973 American Physical Society

Erratum

Authors & Affiliations

B. F. Levine

  • Bell Laboratories, Murray Hill, New Jersey 07974

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Vol. 7, Iss. 6 — 15 March 1973

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