Abstract
Measurements of the low-frequency permittivity and conductivity at are reported for and having antiferromagnetic, insulating ground states covering a broad range of Mn valencies from to . Static dielectric constants are determined from the low- limiting behavior. With increasing , relaxation peaks associated with charge-carrier hopping are observed in the real part of the permittivities and analyzed to determine dopant binding energies. The data are consistent with a simple model of hydrogenic impurity levels and imply effective masses for the compounds. Particularly interesting is a large dielectric constant associated with the -type antiferromagnetic state near the composition .
1 More- Received 30 July 2004
DOI:https://doi.org/10.1103/PhysRevB.70.214433
©2004 American Physical Society