Off-axis electron holography and microstructure of Ba0.5Sr0.5TiO3 thin films on LaAlO3

H. F. Tian, H. C. Yu, X. H. Zhu, Y. G. Wang, D. N. Zheng, H. X. Yang, and J. Q. Li
Phys. Rev. B 71, 115419 – Published 17 March 2005

Abstract

Epitaxial Ba0.5Sr0.5TiO3 thin films grown on the (001) LaAlO3 substrates with a ferroelectric transition at about 250K have been investigated by TEM and off-axis electron holography. Cross-sectional TEM observations show that the 350nm-thick Ba0.5Sr0.5TiO3 film has a sharp interface with notable misfit dislocations. Off-axis electron holographic measurements reveal that, at low temperatures, the ferroelectric polarization results in a remarkable positive potential on the interface and a negative potential on the film surface, and, at room temperature, certain charges could only accumulate at the interfacial dislocations and other defective areas.

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  • Received 30 September 2004

DOI:https://doi.org/10.1103/PhysRevB.71.115419

©2005 American Physical Society

Authors & Affiliations

H. F. Tian1, H. C. Yu1, X. H. Zhu2, Y. G. Wang1, D. N. Zheng2, H. X. Yang1, and J. Q. Li1,*

  • 1Beijing Laboratory of Electron Microscopy, Institute of Physics, Chinese Academy of Sciences, Beijing, 100080, China
  • 2National Laboratory for Superconductivity, Institute of Physics, Chinese Academy of Sciences, Beijing, 100080, China

  • *Corresponding author. Email address: ljq@aphy.iphy.ac.cn

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Vol. 71, Iss. 11 — 15 March 2005

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