Electronic and structural properties of GaAs(100)(2×4) and InAs(100)(2×4) surfaces studied by core-level photoemission and scanning tunneling microscopy

P. Laukkanen, M. Kuzmin, R. E. Perälä, M. Ahola, S. Mattila, I. J. Väyrynen, J. Sadowski, J. Konttinen, T. Jouhti, C. S. Peng, M. Saarinen, and M. Pessa
Phys. Rev. B 72, 045321 – Published 12 July 2005

Abstract

Electronic and structural properties of GaAs(100)(2×4), InAs(100)(2×4), and SbInAs(100)(2×4) reconstructed surfaces have been studied by synchrotron-radiation photoelectron spectroscopy and scanning tunneling microscopy (STM). Based on the difference spectrum of As 3d core-level spectra of IIIAs(100)(2×4), measured in different surface-sensitivity conditions, as well as the line shape of the As 3d emission from the Sb-induced (2×4) surface, we give evidence that the As 3d spectra of GaAs(100)(2×4) and InAs(100)(2×4) consist of two surface-core-level-shifted components. One of them is shifted about 0.2eV to the lower kinetic energy from the bulk component. On the basis of the relative component intensities, this surface-shifted As 3d component is assigned to the emission from the first-layer As dimers in the established model of the (2×4) surface. The other component, shifted about 0.3eV to the higher kinetic energy, is connected to the third-layer As-dimer site. The comparison of the core-level results between GaAs(100)(2×4) and InAs(100)(2×4) suggests that the α2 phase, which has one As dimer in both the first and third atomic layers per unit cell, exists on GaAs(100)(2×4), similarly to the case of InAs(100)(2×4), as predicted in theory but not observed to date. Furthermore, the STM observation of the GaAs(100)(2×4)α2 phase is reported.

    • Received 1 February 2005

    DOI:https://doi.org/10.1103/PhysRevB.72.045321

    ©2005 American Physical Society

    Authors & Affiliations

    P. Laukkanen*, M. Kuzmin, R. E. Perälä, M. Ahola, S. Mattila, and I. J. Väyrynen

    • Department of Physics, University of Turku, FIN-20014 Turku, Finland

    J. Sadowski

    • MAX-lab, Lund University, SE-221 00 Lund, Sweden and Institute of Physics, Polish Academy of Sciences, al. Lotnikow 32/46, 02-668 Warszawa, Poland

    J. Konttinen, T. Jouhti, C. S. Peng, M. Saarinen, and M. Pessa

    • Optoelectronics Research Centre, Tampere University of Technology, P.O. Box 692, FIN-33101 Tampere, Finland

    • *Email address: pekka.laukkanen@utu.fi
    • Also at A. F. Ioffe Physico-Technical Institute, Russian Academy of Sciences, St. Petersburg 194021, Russian Federation.

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    Issue

    Vol. 72, Iss. 4 — 15 July 2005

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