Quantum stability and reentrant bilayer-by-bilayer growth of atomically smooth Pb films on semiconductor substrates

Mustafa M. Özer, Yu Jia, Biao Wu, Zhenyu Zhang, and Hanno H. Weitering
Phys. Rev. B 72, 113409 – Published 16 September 2005

Abstract

Quantum growth of ultrathin Pb films on Ge(111) and Si(111) substrates is studied using scanning tunneling microscopy, total-energy calculations within density functional theory (DFT), and phenomenological modeling. Atomically smooth Pb films can be grown over mesoscopic length scales, but only above a critical film thickness of five or more monolayers. In the smooth growth regime, there exists an intriguing re-entrant bilayer-by-bilayer (RBBB) mode, characterized by strong preference for bilayer growth with periodic interruption of monolayer or trilayer growth. The salient features of the RBBB mode are attributed to the quantum nature of the film stability, as confirmed quantitatively in DFT calculations for PbGe(111). The robustness of the quantum stability is further shown to originate from strong Friedel oscillations in the electron density within the Pb films.

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  • Received 14 September 2004

DOI:https://doi.org/10.1103/PhysRevB.72.113409

©2005 American Physical Society

Authors & Affiliations

Mustafa M. Özer1, Yu Jia2,3, Biao Wu4,3, Zhenyu Zhang3,1, and Hanno H. Weitering1,3

  • 1Department of Physics and Astronomy, The University of Tennessee, Knoxville, Tennessee 37996, USA
  • 2School of Physics and Engineering, Zhengzhou University, Zhengzhou, Henan 450052, China
  • 3Condensed Matter Sciences Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA
  • 4Institute of Physics, Chinese Academy of Sciences, P.O. Box 603, Beijing 100080, China

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Issue

Vol. 72, Iss. 11 — 15 September 2005

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