Quantum transport theory for semiconductor nanostructures: A density-matrix formulation

Rita C. Iotti, Emanuele Ciancio, and Fausto Rossi
Phys. Rev. B 72, 125347 – Published 30 September 2005

Abstract

A general density-matrix formulation of quantum transport phenomena in semiconductor nanostructures is presented. More specifically, contrary to the conventional single-particle correlation expansion, we shall investigate separately the effects of the adiabatic or Markov limit and of the reduction procedure. Our fully operatorial approach allows us to better identify the general properties of the scattering superoperators entering our effective quantum transport theory at various description levels, e.g., N electrons-plus-quasiparticles, N electrons only, and single-particle picture. In addition to coherent transport phenomena characterizing the transient response of the system, the proposed theoretical description allows us to study scattering induced phase coherence in steady-state conditions. As a prototypical example, we shall investigate polaronic effects in strongly biased semiconductor superlattices.

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  • Received 22 March 2005

DOI:https://doi.org/10.1103/PhysRevB.72.125347

©2005 American Physical Society

Authors & Affiliations

Rita C. Iotti, Emanuele Ciancio, and Fausto Rossi*

  • Istituto Nazionale per la Fisica della Materia (INFM) and Dipartimento di Fisica, Politecnico di Torino, Corso Duca degli Abruzzi 24, 10129 Torino, Italy

  • *Electronic address: fausto.rossi@polito.it

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Issue

Vol. 72, Iss. 12 — 15 September 2005

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