Phys. Rev. B 73, 033304 (2006) - Strong coupling of light with $A$ and $B$ excitons in GaN microcavities grown on silicon

Strong coupling of light with $A$ and $B$ excitons in GaN microcavities grown on silicon

I. R. Sellers, F. Semond, M. Leroux, J. Massies, P. Disseix, A-L. Henneghien, J. Leymarie, and A. Vasson

Phys. Rev. B 73, 033304 – Published 9 January 2006

Abstract

We present experimental results demonstrating strong-light matter coupling at low and room temperature in bulk GaN microcavities with epitaxial (Al,Ga)N Bragg mirrors grown on silicon (111). At low temperature, the strong coupling of both the $A$ and $B$ excitonic features of GaN with the cavity mode is clearly resolved in the microcavity. At room temperature a Rabi energy of $50 meV$ is observed and well reproduced using transfer-matrix reflectivity calculations describing the interaction of both the $A$ and $B$ excitonic states with the photonic mode.

Received 19 July 2005

DOI:https://doi.org/10.1103/PhysRevB.73.033304

©2006 American Physical Society

Authors & Affiliations

I. R. Sellers^*, F. Semond, M. Leroux, and J. Massies

CRHEA-CNRS, Rue Bernard Gregory, Parc Sophia Antipolis, Valbonne 06560, France

P. Disseix, A-L. Henneghien, J. Leymarie, and A. Vasson

LASMEA, Université Blaise Pascal, Clermont Ferrand II, Les Cézeaux, 63177 Aubière Cedex, France

^*Electronic address: is@crhea.cnrs.fr

Article Text (Subscription Required)

Click to Expand

References (Subscription Required)

Click to Expand

Issue

Vol. 73, Iss. 3 — 15 January 2006

Reuse & Permissions

Access Options

Author publication services for translation and copyediting assistance advertisement

Sign up to receive regular email alerts from Physical Review B