Influence of an electron-phonon subsystem on specific heat and two-photon absorption of the semimagnetic semiconductors Pb1xYbxX (X=S,Se,Te) near the semiconductor-isolator phase transformation

K. Nouneh, I. V. Kityk, R. Viennois, S. Benet, S. Charar, S. Paschen, and K. Ozga
Phys. Rev. B 73, 035329 – Published 26 January 2006

Abstract

Specific heat, transport, and two-photon absorption (TPA) effects were studied in single crystalline magnetic semiconductors Pb1xYbxX (X=S,Se,Te at x=13%) near semiconductor-isolator phase transitions. It was shown that the TPA may be used as a sensitive tool for investigations of electron-phonon interactions near low temperature semiconductor-isolator phase transformation. Comparison with other methods of phase transition studies has shown more sharplike temperature dependence of the TPA. Particularly, comparison with piezo-optical and dilatometric methods shows on a better temperature resolution of the TPA with respect to the phase transitions. It was established as a correlation between the density of low-temperature phonon modes and values of the TPA. Particularly with increasing of the electron-phonon interactions defined by the temperature-dependent Debye term (parameter β) from the equation C=γT+βT3+i=1nδiT2i+3, one can observe an increase of the TPA oscillator strengths. It was shown that only the low-temperature TPA behaviors might be determined by the features of the low-energy phonon modes related to the observed phase transformation. We also have discovered that low-temperature dependence of the specific heat Cp in Pb1xRxTe (R=Yb,Te) with x=2.6% and 1.65%, respectively, exhibits a nonmagnetic ordering caused by large value of electron-phonon contribution. Applying magnetic fields up to 2T substantially modifies the temperature features of several phonon low-frequency modes, which may indicate a contribution of magnons.

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  • Received 23 March 2005

DOI:https://doi.org/10.1103/PhysRevB.73.035329

©2006 American Physical Society

Authors & Affiliations

K. Nouneh1,2, I. V. Kityk3, R. Viennois2,5, S. Benet1, S. Charar2, S. Paschen5, and K. Ozga4

  • 1Laboratoire de Physique Appliquée et Automatique, Université de Perpignan, 52 Avenue Paul Alduy, Perpignan, France
  • 2Groupe d’Etude des Semiconducteurs, CNRS-UMR 5650, Université Montpellier II, Pl. Eugène Bataillon, 34095 Montpellier Cedex 5, France
  • 3Institute of Physics, J. Dlugosz University of Czestochowa, Aleja Aermii Krajowej 13/15, Czestochowa, Poland
  • 4Institute of Biology and Biophysics, Technical University Czestochowa, Aleja Armii Krajowej 36, Czestochowa, Poland
  • 5Max-Planck-Institut für Chemische Physik Fester Stoffe, Nöthnitzer Strasse 40, 01185 Dresden, Germany

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Issue

Vol. 73, Iss. 3 — 15 January 2006

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