Influence of dimer buckling on dimer diffusion: A scanning tunneling microscopy study

Jeroen Huijben, Arie van Houselt, Harold J. W. Zandvliet, and Bene Poelsema
Phys. Rev. B 73, 073311 – Published 23 February 2006

Abstract

The diffusion of Ge dimers along the substrate dimer rows of Ge(001) has been investigated with scanning tunneling microscopy. The jump frequency of on-top Ge dimers along symmetric dimer rows at room temperature is found to be eight times higher than the diffusion along asymmetric dimer rows (0.36s1 versus 0.044s1). We ascribe this difference to limitations associated with the rocking motion that a dimer has to perform while diffusing along asymmetric dimer rows.

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  • Received 28 July 2005

DOI:https://doi.org/10.1103/PhysRevB.73.073311

©2006 American Physical Society

Authors & Affiliations

Jeroen Huijben, Arie van Houselt, Harold J. W. Zandvliet, and Bene Poelsema

  • Solid State Physics Group, MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede, The Netherlands

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Issue

Vol. 73, Iss. 7 — 15 February 2006

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