Electronic structure of ${\mathrm{In}}_{y}{\mathrm{Ga}}_{1\ensuremath{-}y}{\mathrm{As}}_{1\ensuremath{-}x}{\mathrm{N}}_{x}∕\mathrm{Ga}\mathrm{As}(\mathrm{N})$ quantum dots by ten-band $\mathbf{k}∙\mathbf{p}$ theory

Electronic structure of ${In}_{y} {Ga}_{1 - y} {As}_{1 - x} N_{x} ∕ Ga As (N)$ quantum dots by ten-band $k ∙ p$ theory

Stanko Tomić

Phys. Rev. B 73, 125348 – Published 31 March 2006

Abstract

We present a theoretical study of the electronic and optical properties of $In Ga As N ∕ Ga As$ quantum dot structures. The calculations are based on a $10 \times 10$ $k ∙ p$ band anticrossing Hamiltonian, incorporating valence, conduction, and nitrogen-induced bands. Numerical results for the model system of a capped pyramid-shaped quantum dot with {101} facets on a thin wetting layer are presented. Theoretical results show lowering of the fundamental optical transition on introduction of nitrogen. With appropriate tailoring of the indium and nitrogen concentration this system could be a potential candidate for $1.55 μ m$ emission on a GaAs substrate.