Raman scattering of carbon nanotube bundles under axial strain and strain-induced debundling

Rajay Kumar and Stephen B. Cronin
Phys. Rev. B 75, 155421 – Published 19 April 2007

Abstract

We measure resonant Raman scattering of individual carbon nanotube bundles under axial strains of up to 17%. The main effect of this strain is to cause debundling of the nanotubes. The G band Raman spectra of metallic and semiconducting nanotubes respond differently to strain and debundling, giving insight into the nature of the broad metallic G band line shape. For metallic nanotubes, the G band upshifts and becomes narrower with strain, making it appear more semiconductor-like. Surprisingly, this metal to semiconductor transition is not reversible with strain, indicating that nanotube-nanotube coupling plays a significant role in the observed G band of unperturbed metallic nanotubes.

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  • Received 7 January 2007

DOI:https://doi.org/10.1103/PhysRevB.75.155421

©2007 American Physical Society

Authors & Affiliations

Rajay Kumar and Stephen B. Cronin

  • Department of Electrical Engineering, University of Southern California, Los Angeles, California 90089, USA

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Issue

Vol. 75, Iss. 15 — 15 April 2007

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