Matthiessen’s rule in MgB2: Resistivity and Tc as a function of point defect concentration

B. Sipos, N. Barisic, R. Gaal, L. Forró, J. Karpinski, and F. Rullier-Albenque
Phys. Rev. B 76, 132504 – Published 4 October 2007

Abstract

We present the results of a systematic study of the temperature-dependent resistivity and of Tc of a single crystal MgB2 sample as a function of point defect concentration. We have found linear, albeit weak, correlation between the decreasing superconducting critical temperature and the residual resistivity and no variation of the slope of the ρ(T) curve at high temperature. These findings reinforce the already existing picture of s-wave pairing for the superconductivity. The interband scattering is low despite increasing disorder. Somewhat surprisingly, Matthiessen’s rule is followed even in this two-band metal.

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  • Received 27 April 2007

DOI:https://doi.org/10.1103/PhysRevB.76.132504

©2007 American Physical Society

Authors & Affiliations

B. Sipos, N. Barisic, R. Gaal, and L. Forró

  • Faculté des Sciences de Base, EPFL, CH-1015 Lausanne, Switzerland

J. Karpinski

  • Solid State Physics Laboratory, ETH, 8093 Zürich, Switzerland

F. Rullier-Albenque

  • SPEC (CNRS URA2464), CEA Saclay, 91191 Gif sur Yvette Cedex, France

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Issue

Vol. 76, Iss. 13 — 1 October 2007

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