Band-gap variation in Mg- and Cd-doped ZnO nanostructures and molecular clusters

Manoj K. Yadav, Manoranjan Ghosh, Ranjit Biswas, Arup K. Raychaudhuri, Abhijit Mookerjee, and Soumendu Datta
Phys. Rev. B 76, 195450 – Published 30 November 2007

Abstract

We study the effect of doping on band gap in Mg- and Cd-doped zinc oxide nanostructures and molecular clusters. The fabrication of doped nanostructures was carried out via solution route. The lower doping efficiency of Cd than that of Mg has been explained in terms of binding energy. The band gap varied from 3.04eV in Cd-doped (9.1at.% of Cd) nanostructure to 3.99eV in Mg-doped (16.8at.% of Mg) nanostructure. Theoretical analysis using first-principles molecular dynamics techniques on pristine and doped ZnO clusters shows that the energy gap between the highest occupied molecular orbital and the lowest unoccupied molecular orbital exhibits a similar variation as does the band gap in nanostructures with the varying concentration of Mg and Cd.

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  • Received 19 April 2007

DOI:https://doi.org/10.1103/PhysRevB.76.195450

©2007 American Physical Society

Authors & Affiliations

Manoj K. Yadav, Manoranjan Ghosh, Ranjit Biswas, Arup K. Raychaudhuri, and Abhijit Mookerjee

  • Unit for Nanoscience and Technology, S.N. Bose National Center for Basic Sciences, JD Block, Sector III, Salt Lake City, Kolkata 700 098, India

Soumendu Datta

  • Department of Materials Science, S.N. Bose National Center for Basic Sciences, JD Block, Sector III, Salt Lake City, Kolkata 700 098, India

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Issue

Vol. 76, Iss. 19 — 15 November 2007

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