Local band gap modulations in non-stoichiometric V2O3 films probed by scanning tunneling spectroscopy

V. Simic-Milosevic, N. Nilius, H.-P. Rust, and H.-J. Freund
Phys. Rev. B 77, 125112 – Published 11 March 2008

Abstract

Scanning tunneling microscopy and spectroscopy have been used to investigate the electronic structure of non-stoichiometric V2O3 islands with a vanadyl termination grown on Au(111). The spectroscopic measurements reveal the correlation gap of bulk V2O3 that varies between 0.2 and 0.75eV for different sample preparations. In addition, gap modulations of roughly 0.2eV are observed at different locations within the oxide islands. The changes in gap size are attributed to local deviations from the ideal V2O3 stoichiometry in films produced at more oxidizing or reducing conditions. By evaluating the position of the Fermi level with respect to the band edges, a p-type conductance characteristic is dominantly observed for the V2O3 islands, indicative of an efficient hole doping of the V3d band.

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  • Received 7 September 2007

DOI:https://doi.org/10.1103/PhysRevB.77.125112

©2008 American Physical Society

Authors & Affiliations

V. Simic-Milosevic, N. Nilius*, H.-P. Rust, and H.-J. Freund

  • Department of Chemical Physics, Fritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4-6, D-14195 Berlin, Germany

  • *Corresponding author: nilius@fhi-berlin.mpg.de

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Issue

Vol. 77, Iss. 12 — 15 March 2008

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