Effective doping of single-layer graphene from underlying SiO2 substrates

Yumeng Shi, Xiaochen Dong, Peng Chen, Junling Wang, and Lain-Jong Li
Phys. Rev. B 79, 115402 – Published 3 March 2009

Abstract

When a single-layer graphene (SLG) is on SiO2 substrates, the charge exchange at their interface results in a dipole, which direction strongly depends on the contact potential difference between the SLG and the substrates. Due to the longer experimental charge screening length of SLG than its thickness, the charge redistribution imposes effective p or n doping to SLG films. The substrate-dependent doping of SLG films is further confirmed by Raman and electrical measurements. Also, the unique electronic structures of SLG films make them sensitive to the doping rather than effective gating from the SiO2 substrates.

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  • Received 22 January 2009

DOI:https://doi.org/10.1103/PhysRevB.79.115402

©2009 American Physical Society

Authors & Affiliations

Yumeng Shi1, Xiaochen Dong1,2, Peng Chen2, Junling Wang1, and Lain-Jong Li1,*

  • 1School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798
  • 2School of Chemical and Biomedical Engineering, Nanyang Technological University, Singapore, 637459

  • *ljli@ntu.edu.sg

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Issue

Vol. 79, Iss. 11 — 15 March 2009

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