Control of the chirality and polarity of magnetic vortices in triangular nanodots

M. Jaafar, R. Yanes, D. Perez de Lara, O. Chubykalo-Fesenko, A. Asenjo, E. M. Gonzalez, J. V. Anguita, M. Vazquez, and J. L. Vicent
Phys. Rev. B 81, 054439 – Published 24 February 2010

Abstract

Magnetic vortex dynamics in lithographically prepared nanodots is currently a subject of intensive research, particularly after recent demonstration that the vortex polarity can be controlled by in-plane magnetic field. This has stimulated the proposals of nonvolatile vortex magnetic random access memories. In this work, we demonstrate that triangular nanodots offer a real alternative where vortex chirality, in addition to polarity, can be controlled. In the static regime, we show that vortex chirality can be tailored by applying in-plane magnetic field, which is experimentally imaged by means of variable-field magnetic force microscopy. In addition, the polarity can be also controlled by applying a suitable out-of-plane magnetic field component. The experiment and simulations show that to control the vortex polarity, the out-of-plane field component, in this particular case, should be higher than the in-plane nucleation field. Micromagnetic simulations in the dynamical regime show that the magnetic vortex polarity can be changed with short-duration magnetic field pulses, while longer pulses change the vortex chirality.

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  • Received 16 April 2009

DOI:https://doi.org/10.1103/PhysRevB.81.054439

©2010 American Physical Society

Authors & Affiliations

M. Jaafar1, R. Yanes1, D. Perez de Lara2, O. Chubykalo-Fesenko1, A. Asenjo1,*, E. M. Gonzalez2, J. V. Anguita3, M. Vazquez1, and J. L. Vicent2

  • 1Instituto de Ciencia de Materiales de Madrid, CSIC, Sor Juana Inés de la Cruz 3, Cantoblanco, 28049 Madrid, Spain
  • 2Departamento Física de Materiales, Facultad CC. Físicas, Universidad Complutense, 28040 Madrid, Spain
  • 3Instituto de Microelectrónica de Madrid, CNM-CSIC, Isaac Newton 8, Tres Cantos, 28760 Madrid, Spain

  • *aasenjo@icmm.csic.es

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Vol. 81, Iss. 5 — 1 February 2010

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