Phys. Rev. B 81, 085205 (2010) - Intrinsic phonon relaxation times from first-principles studies of the thermal conductivities of Si and Ge

Intrinsic phonon relaxation times from first-principles studies of the thermal conductivities of Si and Ge

A. Ward and D. A. Broido

Phys. Rev. B 81, 085205 – Published 4 February 2010; Erratum Phys. Rev. B 91, 039906 (2015)

Abstract

Using a first-principles approach, we present forms for the intrinsic phonon relaxation times in semiconductors, which properly reflect the physically distinct behaviors of the normal and umklapp scattering processes. We find that accurate representation of the phonon-phonon scattering strength and inclusion of scattering of acoustic phonons by optic phonons are essential ingredients, which are missing from the decades old derivations of commonly used intrinsic relaxation times. We also assess the validity of the relaxation time approximation itself for silicon and germanium.

Received 23 December 2009

DOI:https://doi.org/10.1103/PhysRevB.81.085205

©2010 American Physical Society

Erratum

Erratum: Intrinsic phonon relaxation times from first-principles studies of the thermal conductivities of Si and Ge [Phys. Rev. B 81, 085205 (2010)]

A. Ward and D. A. Broido

Phys. Rev. B 91, 039906 (2015)

Authors & Affiliations

A. Ward and D. A. Broido

Department of Physics, Boston College, Chestnut Hill, Massachusetts 02467, USA

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Issue

Vol. 81, Iss. 8 — 15 February 2010

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