Understanding why the thinnest SiNx interface in transition-metal nitrides is stronger than the ideal bulk crystal

R. F. Zhang, A. S. Argon, and S. Veprek
Phys. Rev. B 81, 245418 – Published 15 June 2010

Abstract

One-monolayer-thick SiNx interfacial layer in superhard nanocomposites, consisting of 3–4 nm size TiN nanocrystals joined by that layer, is stronger than a bulk SiNx crystal due to valence charge transfer from the metallic TiN, thus providing the nanocomposites with significant hardness enhancement. However, this enhancement is lost when the thickness of the interfacial SiN increases to 2 monolayers and the hardness decreases. We show that the softening of the nanocomposites with thicker SiNx interface is caused by the weakening of the TiN bonds close to that interface, that increases with increasing of the SiNx thickness. Other possible mechanisms of the softening are briefly discussed and ruled out. This finding may open up possible way of preparing new, even stronger superhard nanocomposites.

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  • Received 13 November 2009

DOI:https://doi.org/10.1103/PhysRevB.81.245418

©2010 American Physical Society

Authors & Affiliations

R. F. Zhang1, A. S. Argon2, and S. Veprek1,*

  • 1Department of Chemistry, Technical University Munich, Lichtenbergstr. 4, D-85747 Garching, Germany
  • 2Department of Mechanical Engineering, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, USA

  • *Corresponding author. FAX: +49 89 28913626; stan.veprek@lrz.tum.de

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Vol. 81, Iss. 24 — 15 June 2010

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