High-excitation and high-resolution photoluminescence spectra of bulk AlN

Martin Feneberg, Robert A. R. Leute, Benjamin Neuschl, Klaus Thonke, and Matthias Bickermann
Phys. Rev. B 82, 075208 – Published 16 August 2010

Abstract

Photoluminescence spectra of high-quality bulk AlN crystals are reported. In addition to the expected linear luminescence features like free excitons and donor-bound excitons, nonlinear processes like biexcitons and the exciton-exciton scattering band are seen for higher excitation densities. For temperatures above 150K the electron-hole plasma becomes clearly visible in the spectra. A detailed analysis of the data yields an exciton binding energy of 55 meV, a biexciton binding energy of 28.5 meV, a band gap of 6.089 eV at low temperature, and a band gap of 6.015 eV at room temperature.

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  • Received 29 December 2009

DOI:https://doi.org/10.1103/PhysRevB.82.075208

©2010 American Physical Society

Authors & Affiliations

Martin Feneberg*, Robert A. R. Leute, Benjamin Neuschl, and Klaus Thonke

  • Institut für Quantenmaterie/Gruppe Halbleiterphysik, Universität Ulm, 89069 Ulm, Germany

Matthias Bickermann

  • Institut für Werkstoffwissenschaften 6, Universität Erlangen, 91058 Erlangen, Germany

  • *Present address: Institut für Experimentelle Physik, Otto-von-Guericke-Universität Magdeburg, Magdeburg, Germany; martin.feneberg@ovgu.de

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Issue

Vol. 82, Iss. 7 — 15 August 2010

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