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Crystal-induced effects at crystal/amorphous interfaces: The case of Si3N4/SiO2

Weronika Walkosz, Robert F. Klie, Serdar Öğüt, Biljana Mikijelj, Stephen J. Pennycook, Sokrates T. Pantelides, and Juan C. Idrobo
Phys. Rev. B 82, 081412(R) – Published 25 August 2010

Abstract

We reveal the presence of atomic short-range ordering at the interface between crystalline β-Si3N4 and amorphous SiO2 using aberration-corrected scanning transmission electron microscopy. We show that the first atomic layers of the amorphous SiO2 film reconstruct taking on the crystalline form of Si3N4. Furthermore, we find that there is a nonuniform interatomic mixing of oxygen and nitrogen at different atomic sites at the interface. The work provides a direct look at the atomic structure of crystal/amorphous interfaces composed of light elements.

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  • Received 2 July 2010

DOI:https://doi.org/10.1103/PhysRevB.82.081412

©2010 American Physical Society

Authors & Affiliations

Weronika Walkosz1, Robert F. Klie1, Serdar Öğüt1, Biljana Mikijelj2, Stephen J. Pennycook3,4, Sokrates T. Pantelides4,3, and Juan C. Idrobo1,4,3

  • 1Department of Physics, University of Illinois at Chicago, Chicago, Illinois 60607, USA
  • 2Ceradyne, Inc., Costa Mesa, California 92626, USA
  • 3Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA
  • 4Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235, USA

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Issue

Vol. 82, Iss. 8 — 15 August 2010

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