Theory of magnetization in multiferroics: Competition between ferromagnetic and antiferromagnetic domains

Helen V. Gomonay, Ievgeniya G. Korniienko, and Vadim M. Loktev
Phys. Rev. B 83, 054424 – Published 22 February 2011

Abstract

Many technological applications of multiferroics are based on their ability to reconstruct the domain structure (DS) under the action of small external fields. In the present paper we analyze the different scenarios of the DS behavior in a multiferroic that shows simultaneously ferromagnetic and antiferromagnetic ordering on the different systems of magnetic ions. We consider the way to control a composition of the DS and macroscopic properties of the sample by an appropriate field treatment. It is found that the sensitivity of the DS to the external magnetic field and the magnetic susceptibility in a low-field region are determined mainly by the de-stressing effects (that have a magnetoelastic origin). In a particular case of the Sr2Cu3O4Cl2 crystal we anticipate the peculiarities of the elastic and magnetoelastic properties at T100 K.

  • Figure
  • Figure
  • Figure
  • Figure
  • Figure
  • Figure
  • Figure
3 More
  • Received 16 March 2010

DOI:https://doi.org/10.1103/PhysRevB.83.054424

©2011 American Physical Society

Authors & Affiliations

Helen V. Gomonay1,2,*, Ievgeniya G. Korniienko1, and Vadim M. Loktev1,2

  • 1National Technical University of Ukraine “KPI,” ave Peremogy, 37, 03056 Kyiv, Ukraine
  • 2Bogolyubov Institute for Theoretical Physics NAS of Ukraine, Metrologichna strasse 14-b, 03680, Kyiv, Ukraine

  • *malyshen@ukrpack.net

Article Text (Subscription Required)

Click to Expand

References (Subscription Required)

Click to Expand
Issue

Vol. 83, Iss. 5 — 1 February 2011

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×