Magnetoresistance in a high-mobility two-dimensional electron gas

L. Bockhorn, P. Barthold, D. Schuh, W. Wegscheider, and R. J. Haug
Phys. Rev. B 83, 113301 – Published 2 March 2011

Abstract

In a high-mobility two-dimensional electron gas (2DEG) in a GaAs/Al0.3Ga0.7As quantum well we observe a strong magnetoresistance. In lowering the electron density, the magnetoresistance gets more pronounced and reaches values of more than 300%. We observe that the huge magnetoresistance vanishes when increasing the temperature. An additional density-dependent factor is introduced to be able to fit the parabolic magnetoresistance to the electron-electron interaction correction.

  • Figure
  • Figure
  • Figure
  • Figure
  • Received 30 November 2010

DOI:https://doi.org/10.1103/PhysRevB.83.113301

©2011 American Physical Society

Authors & Affiliations

L. Bockhorn1, P. Barthold1, D. Schuh2, W. Wegscheider2,*, and R. J. Haug1

  • 1Institut für Festkörperphysik, Leibniz Universität Hannover, Appelstr. 2, D-30167 Hannover, Germany
  • 2Institut für Experimentelle und Angewandte Physik, Universität Regensburg, Universitätsstrasse 31, D-93053 Regensburg, Germany

  • *Present address: Laboratorium für Festkörperphysik, ETH Zürich, Schafmattstr. 16, 8093 Zürich, Switzerland.

Article Text (Subscription Required)

Click to Expand

References (Subscription Required)

Click to Expand
Issue

Vol. 83, Iss. 11 — 15 March 2011

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×