The intrinsic and extrinsic doping properties of BiVO${}_4$, i.e., the formation energies and transition energy levels of defects and impurities, have been studied systematically by first-principles density-functional theory. We find that for doping caused by intrinsic defects, O vacancies are shallow donors and Bi vacancies are shallow acceptors. However, these defects compensate each other and can only lead to moderate $n$-type and $p$-type conductivities at Bi-rich and O-rich growth conditions, respectively. To obtain BiVO${}_4$ with high $n$-type and $p$-type conductivities, which are required for forming Ohmic contacts, extrinsic doping using foreign impurities is necessary. Our results reveal that Sr, Ca, Na, and K atoms on Bi sites are very shallow acceptors and have rather low formation energies. The calculated Fermi-level pinning positions predict that doping of these impurities under oxygen-rich growth conditions should result in outstanding $p$-type conductivity. Substitutional Mo and W atoms on V sites are very shallow donors and have very low formation energies. Fermi-level pinning position calculations expect the doping of Mo and W under oxygen-poor growth conditions to produce excellent $n$-type conductivity. Also discussed is the dependence of formation energies and transition energies of defects on the atomic size and atomic chemical potential trends.

• Received 19 November 2010

DOI:https://doi.org/10.1103/PhysRevB.83.155102