Tunneling conductance and local density of states in tight-binding junctions

C. Berthod and T. Giamarchi
Phys. Rev. B 84, 155414 – Published 12 October 2011

Abstract

We study the relationship between the differential conductance and the local density of states in tight-binding tunnel junctions where the junction geometry can be varied between the point-contact and the planar-contact limits. The conductances are found to differ significantly in these two limiting cases. We also examine how the matrix element influences the tunneling characteristics and produces contrast in a simple model of scanning tunneling microscope (STM). Some implications regarding the interpretation of STM spectroscopic data in the cuprates are discussed. The calculations are carried out within the real-space Keldysh formalism.

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  • Received 19 February 2011

DOI:https://doi.org/10.1103/PhysRevB.84.155414

©2011 American Physical Society

Authors & Affiliations

C. Berthod and T. Giamarchi

  • DPMC-MaNEP, Université de Genève, 24 quai Ernest-Ansermet, CH-1211 Genève 4, Switzerland

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Issue

Vol. 84, Iss. 15 — 15 October 2011

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