Tuning the electronic structure of ultrathin crystalline silica films on Ru(0001)

R. Włodarczyk, M. Sierka, J. Sauer, D. Löffler, J. J. Uhlrich, X. Yu, B. Yang, I. M. N. Groot, S. Shaikhutdinov, and H.-J. Freund
Phys. Rev. B 85, 085403 – Published 2 February 2012
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Abstract

A combination of density functional theory calculations and photoelectron spectroscopy provides new insights into the atomistic picture of ultrathin silica films grown on Ru(0001). The silica film features a double-layer silicate sheet formed by corner-sharing [SiO4] tetrahedra and is weakly bound to the Ru(0001) substrate. This allows oxygen atoms to reversibly adsorb directly on the metal surface underneath the silica film. We demonstrate that the amount of adsorbed oxygen can be reversibly varied by vacuum annealing and oxidation, which in turn result in gradual changes of the silica/Ru electronic states. This finding opens the possibility for tuning the electronic properties of oxide/metal systems without altering the thickness or the structure of an oxide overlayer.

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  • Received 17 October 2011

DOI:https://doi.org/10.1103/PhysRevB.85.085403

©2012 American Physical Society

Authors & Affiliations

R. Włodarczyk, M. Sierka*, and J. Sauer

  • Institut für Chemie, Humboldt-Universität zu Berlin, Unter den Linden 6, D-10099 Berlin, Germany

D. Löffler, J. J. Uhlrich, X. Yu, B. Yang, I. M. N. Groot, S. Shaikhutdinov, and H.-J. Freund

  • Department of Chemical Physics, Fritz Haber Institute of the Max Planck Society, Faradayweg 4-6, D-14195 Berlin, Germany

  • *Present address: Institut für Materialwissenschaft und Werkstofftechnologie, Friedrich-Schiller-Universität Jena, Löbdergraben 32, D-07743 Jena, Germany; marek.sierka@uni-jena.de
  • shaikhutdinov@fhi-berlin.mpg.de

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Issue

Vol. 85, Iss. 8 — 15 February 2012

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