Transport properties of oxygen vacancy filaments in metal/crystalline or amorphous HfO2/metal structures

Xavier Cartoixà, Riccardo Rurali, and Jordi Suñé
Phys. Rev. B 86, 165445 – Published 26 October 2012

Abstract

We study from first principles the transport properties of metal/monoclinic-HfO2/metal and metal/amorphous-HfO2/metal structures where paths built from oxygen vacancies in the hafnium oxide host are created. Using a Green's function formalism coupled with a density functional theory code, we compute the conductance of vacancy filaments of different thicknesses, showing that even the thinnest filaments can sustain conductive channels, which should display signs of conductance quantization, for both the monoclinic and amorphous phases of hafnia.

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  • Received 23 May 2012

DOI:https://doi.org/10.1103/PhysRevB.86.165445

©2012 American Physical Society

Authors & Affiliations

Xavier Cartoixà1, Riccardo Rurali2, and Jordi Suñé1

  • 1Departament d’Enginyeria Electrònica, Universitat Autònoma de Barcelona, 08193 Bellaterra, Spain
  • 2Institut de Ciència de Materials de Barcelona ICMAB-CSIC, Campus de Bellaterra, 08193 Bellaterra, Spain

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Issue

Vol. 86, Iss. 16 — 15 October 2012

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