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Evidence for a direct band gap in the topological insulator Bi2Se3 from theory and experiment

I. A. Nechaev, R. C. Hatch, M. Bianchi, D. Guan, C. Friedrich, I. Aguilera, J. L. Mi, B. B. Iversen, S. Blügel, Ph. Hofmann, and E. V. Chulkov
Phys. Rev. B 87, 121111(R) – Published 22 March 2013
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Abstract

Using angle-resolved photoelectron spectroscopy and ab initio GW calculations, we unambiguously show that the widely investigated three-dimensional topological insulator Bi2Se3 has a direct band gap at the Γ point. Experimentally, this is shown by a three-dimensional band mapping in large fractions of the Brillouin zone. Theoretically, we demonstrate that the valence-band maximum is located at the Γ point only if many-body effects are included in the calculation. Otherwise, it is found in a high-symmetry mirror plane away from the zone center.

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  • Received 17 October 2012

DOI:https://doi.org/10.1103/PhysRevB.87.121111

©2013 American Physical Society

Authors & Affiliations

I. A. Nechaev1,2, R. C. Hatch3, M. Bianchi3, D. Guan3, C. Friedrich4, I. Aguilera4, J. L. Mi5, B. B. Iversen5, S. Blügel4, Ph. Hofmann3, and E. V. Chulkov2,6,7

  • 1Tomsk State University, 634050 Tomsk, Russia
  • 2Donostia International Physics Center (DIPC), 20018 San Sebastián/Donostia, Basque Country, Spain
  • 3Department of Physics and Astronomy, Interdisciplinary Nanoscience Center, Aarhus University, 8000 Aarhus C, Denmark
  • 4Peter Grünberg Institut and Institute for Advanced Simulation, Forschungszentrum Jülich and JARA, D-52425 Jülich, Germany
  • 5Center for Materials Crystallography, Department of Chemistry, Interdisciplinary Nanoscience Center, Aarhus University, 8000 Aarhus C, Denmark
  • 6Departamento de Física de Materiales UPV/EHU, Facultad de Ciencias Químicas, UPV/EHU, Apdo. 1072, 20080 San Sebastián/Donostia, Basque Country, Spain
  • 7Centro de Física de Materiales CFM–MPC, Centro Mixto CSIC-UPV/EHU, 20080 San Sebastián/Donostia, Basque Country, Spain

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Issue

Vol. 87, Iss. 12 — 15 March 2013

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