Nonmonotonically tunable Rashba spin-orbit coupling by multiple-band filling control in SrTiO3-based interfacial d-electron gases

Haixing Liang, Long Cheng, Laiming Wei, Zhenlin Luo, Guolin Yu, Changgan Zeng, and Zhenyu Zhang
Phys. Rev. B 92, 075309 – Published 12 August 2015
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Abstract

Spin-orbit coupling (SOC) for d-electron gas can be substantially enriched compared with the sp-electron gas due to the delicate ordering of the multiple d subbands. Here, we demonstrate the nontrivial Rashba SOC effect at SrTiO3-based interfaces (LaAlO3/SrTiO3 and LaVO3/SrTiO3) directly related to the Ti 3d subband ordering via magnetotransport characterizations. Unusual k-cubic Rashba SOC contributed from the dxz/yz states is revealed. More strikingly, when a gate voltage is swept to tune the band filling, the SOC strength initially increases and then decreases to form a dome feature, accompanied by an apparent single- to two-carrier transition. These two concomitant effects strongly indicate that the SOC behavior is largely determined by the Ti 3d subbands regardless of the overlayer boundary conditions, with the SOC strength peaked at the dxydxz/yz crossings due to the band hybridization effect as predicted. The present findings offer new insights into exploration of oxide-based quantum phases and spintronic devices.

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  • Received 30 January 2015
  • Revised 19 May 2015

DOI:https://doi.org/10.1103/PhysRevB.92.075309

©2015 American Physical Society

Authors & Affiliations

Haixing Liang1, Long Cheng1, Laiming Wei1,*, Zhenlin Luo2, Guolin Yu3, Changgan Zeng1,4,5,†, and Zhenyu Zhang4,5

  • 1Hefei National Laboratory for Physical Sciences at the Microscale (HFNL), CAS Key Laboratory of Strongly Coupled Quantum Matter Physics, and Department of Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
  • 2National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui 230026, China
  • 3National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Science, Shanghai 200083, China
  • 4International Center for Quantum Design of Functional Materials (ICQD), HFNL, University of Science and Technology of China, Hefei, Anhui 230026, China
  • 5Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China

  • *Corresponding author: laiming@ustc.edu.cn
  • Corresponding author: cgzeng@ustc.edu.cn

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Issue

Vol. 92, Iss. 7 — 15 August 2015

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