Origin of low thermal conductivity in SnSe

Yu Xiao, Cheng Chang, Yanling Pei, Di Wu, Kunling Peng, Xiaoyuan Zhou, Shengkai Gong, Jiaqing He, Yongsheng Zhang, Zhi Zeng, and Li-Dong Zhao
Phys. Rev. B 94, 125203 – Published 12 September 2016
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Abstract

We provide direct evidence to understand the origin of low thermal conductivity of SnSe using elastic measurements. Compared to state-of-the-art lead chalcogenides PbQ(Q=Te, Se, S), SnSe exhibits low values of sound velocity (1420m/s), Young's modulus (E27.7GPa), and shear modulus (G9.6GPa), which are ascribed to the extremely weak Sn-Se atomic interactions (or bonds between layers); meanwhile, the deduced average Grüneisen parameter γ of SnSe is as large as ∼3.13, originating from the strong anharmonicity of the bonding arrangement. The calculated phonon mean free path (l ∼ 0.84 nm) at 300 K is comparable to the lattice parameters of SnSe, indicating little room is left for further reduction of the thermal conductivity through introducing nanoscale microstructures and microscale grain boundaries. The low elastic properties indicate that the weak chemical bonding stiffness of SnSe generally causes phonon modes softening which eventually slows down phonon propagation. This work provides insightful data to understand the low lattice thermal conductivity of SnSe.

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  • Received 2 April 2016
  • Revised 22 July 2016

DOI:https://doi.org/10.1103/PhysRevB.94.125203

©2016 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Yu Xiao1, Cheng Chang1, Yanling Pei1, Di Wu2,3, Kunling Peng4, Xiaoyuan Zhou4, Shengkai Gong1, Jiaqing He2,3, Yongsheng Zhang5,6,*, Zhi Zeng5,6, and Li-Dong Zhao1,†

  • 1School of Materials Science and Engineering, Beihang University, Beijing 100191, China
  • 2Department of Physics, South University of Science and Technology of China, Shenzhen 518055, China
  • 3Shenzhen Key Laboratory of Thermoelectric Materials, Shenzhen 518055, China
  • 4College of Physics, Chongqing University, Chongqing 401331, China
  • 5Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, China
  • 6University of Science and Technology of China, Hefei 230026, China

  • *Corresponding author: yshzhang@theory.issp.ac.cn
  • Corresponding author: zhaolidong@buaa.edu.cn

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Issue

Vol. 94, Iss. 12 — 15 September 2016

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