Tunneling anomalous Hall effect in nanogranular CoFe-B-Al-O films near the metal-insulator transition

V. V. Rylkov, S. N. Nikolaev, K. Yu. Chernoglazov, V. A. Demin, A. V. Sitnikov, M. Yu. Presnyakov, A. L. Vasiliev, N. S. Perov, A. S. Vedeneev, Yu. E. Kalinin, V. V. Tugushev, and A. B. Granovsky
Phys. Rev. B 95, 144202 – Published 12 April 2017

Abstract

We present results of an experimental study of structural, magnetotransport, and magnetic properties of a disordered system which consists of the strained crystalline CoFe nanogranules with the size of 2–5 nm embedded into the B-Al-O oxide matrix with a large number of dispersed Fe or Co atoms. They act in the matrix as magnetic ions and contribute essentially to the magnetization at T ⩽ 25 K. The conductivity of the system follows the lnT law on the metallic side of the metal-insulator transition in the wide range of metal content variation x=4956at.% that formally corresponds to the conductivity of the array of granules with strong tunnel coupling between them. We found that scaling power laws in the dependence of anomalous Hall effect (AHE) resistivity ρAHE vs longitudinal resistivity ρ strongly differ if temperature T or metal content x are variable parameters. The obtained results are interpreted in terms of the model of two sources of AHE emf arising from metallic nanogranules and insulating tunneling regions, respectively. We suggest that the tunneling AHE component can be caused by the recently predicted scattering assisted mechanism [A. V. Vedyayev et al., Phys. Rev. Lett. 110, 247204 (2013)] and is strongly shunted due to generation of local circular Hall current.

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  • Received 18 October 2016
  • Revised 2 February 2017

DOI:https://doi.org/10.1103/PhysRevB.95.144202

©2017 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

V. V. Rylkov1,2,*, S. N. Nikolaev1, K. Yu. Chernoglazov1, V. A. Demin1, A. V. Sitnikov3, M. Yu. Presnyakov1, A. L. Vasiliev1, N. S. Perov4, A. S. Vedeneev5, Yu. E. Kalinin3, V. V. Tugushev1, and A. B. Granovsky2,4

  • 1National Research Centre “Kurchatov Institute”, 123182 Moscow, Russia
  • 2Institute of Applied and Theoretical Electrodynamics RAS, 127412 Moscow, Russia
  • 3Voronezh State Technical University, 394026 Voronezh, Russia
  • 4Faculty of Physics, Lomonosov Moscow State University, 119991 Moscow, Russia
  • 5Kotel’nikov Institute of Radio Engineering and Electronics RAS, 141190 Fryazino, Moscow Region, Russia

  • *vvrylkov@mail.ru

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Issue

Vol. 95, Iss. 14 — 1 April 2017

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