Driving-Dependent Damping of Rabi Oscillations in Two-Level Semiconductor Systems

D. Mogilevtsev, A. P. Nisovtsev, S. Kilin, S. B. Cavalcanti, H. S. Brandi, and L. E. Oliveira
Phys. Rev. Lett. 100, 017401 – Published 3 January 2008

Abstract

We propose a mechanism to explain the nature of the damping of Rabi oscillations with an increasing driving-pulse area in localized semiconductor systems and have suggested a general approach which describes a coherently driven two-level system interacting with a dephasing reservoir. Present calculations show that the non-Markovian character of the reservoir leads to the dependence of the dephasing rate on the driving-field intensity, as observed experimentally. Moreover, we have shown that the damping of Rabi oscillations might occur as a result of different dephasing mechanisms for both stationary and nonstationary effects due to coupling to the environment. Present calculated results are found in quite good agreement with available experimental measurements.

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  • Received 19 March 2007

DOI:https://doi.org/10.1103/PhysRevLett.100.017401

©2008 American Physical Society

Authors & Affiliations

D. Mogilevtsev1, A. P. Nisovtsev1, S. Kilin1, S. B. Cavalcanti2,3, H. S. Brandi4,5, and L. E. Oliveira3

  • 1Institute of Physics, NASB, F. Skarina Avenue 68, Minsk, 220072, Belarus
  • 2Departamento de Física, UFAL, Cidade Universitária, 57072-970, Maceió-AL, Brazil
  • 3Instituto de Física, UNICAMP, CP 6165, Campinas-SP, 13083-970, Brazil
  • 4Instituto de Física, UFRJ, Rio de Janeiro-RJ, 21945-9702, Brazil
  • 5Inmetro, Campus de Xerem, Duque de Caxias-RJ, 25250-020, Brazil

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Issue

Vol. 100, Iss. 1 — 11 January 2008

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