Abstract
It has been demonstrated theoretically and experimentally that the thickness of a very thin, pure Al film put on top of an amorphous Si (-Si) layer can be used as a very accurate tool to control the crystallization temperature of -Si. The effect has been explained quantitatively by application of surface-interface thermodynamics. The predictions have been confirmed experimentally by a real-time in situ spectroscopic ellipsometry investigation of the crystallization temperature of -Si as a function of the thickness of ultrathin Al layers.
- Received 11 July 2007
DOI:https://doi.org/10.1103/PhysRevLett.100.125503
©2008 American Physical Society