Tailoring the Ultrathin Al-Induced Crystallization Temperature of Amorphous Si by Application of Interface Thermodynamics

Z. M. Wang, J. Y. Wang, L. P. H. Jeurgens, and E. J. Mittemeijer
Phys. Rev. Lett. 100, 125503 – Published 27 March 2008

Abstract

It has been demonstrated theoretically and experimentally that the thickness of a very thin, pure Al film put on top of an amorphous Si (a-Si) layer can be used as a very accurate tool to control the crystallization temperature of a-Si. The effect has been explained quantitatively by application of surface-interface thermodynamics. The predictions have been confirmed experimentally by a real-time in situ spectroscopic ellipsometry investigation of the crystallization temperature of a-Si as a function of the thickness of ultrathin Al layers.

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  • Received 11 July 2007

DOI:https://doi.org/10.1103/PhysRevLett.100.125503

©2008 American Physical Society

Authors & Affiliations

Z. M. Wang, J. Y. Wang*, L. P. H. Jeurgens, and E. J. Mittemeijer

  • Max Planck Institute for Metals Research, Heisenbergstrasse 3, D-70569 Stuttgart, Germany

  • *j.y.wang@mf.mpg.de

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Vol. 100, Iss. 12 — 28 March 2008

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