Formation of Large Voids in the Amorphous Phase-Change Memory Ge2Sb2Te5 Alloy

Zhimei Sun, Jian Zhou, Andreas Blomqvist, Börje Johansson, and Rajeev Ahuja
Phys. Rev. Lett. 102, 075504 – Published 19 February 2009; Erratum Phys. Rev. Lett. 104, 029901 (2010)

Abstract

On the basis of ab initio molecular dynamics simulations, large voids mainly surrounded by Te atoms are observed in molten and amorphous Ge2Sb2Te5, which is due to the clustering of two- and threefold coordinated Te atoms. Furthermore, pressure shows a significant effect on the clustering of the under coordinated Te atoms and hence the formation of large voids. The present results demonstrate that both vacancies and Te play an important role in the fast reversible phase transition process.

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  • Received 23 June 2008

DOI:https://doi.org/10.1103/PhysRevLett.102.075504

©2009 American Physical Society

Erratum

Authors & Affiliations

Zhimei Sun1,*, Jian Zhou1, Andreas Blomqvist2, Börje Johansson2, and Rajeev Ahuja2

  • 1College of Materials, Xiamen University, 361005 Xiamen, China
  • 2Department of Physics and Materials Science, Uppsala University, Box 530, 75121 Uppsala, Sweden

  • *Author to whom correspondence should be addressed. zmsun@xmu.edu.cn zhmsun2@yahoo.com

Comments & Replies

Sun et al. Reply:

Zhimei Sun, Jian Zhou, Andreas Blomqvist, Börje Johansson, and Rajeev Ahuja
Phys. Rev. Lett. 104, 019602 (2010)

Comment on “Formation of Large Voids in the Amorphous Phase-Change Memory Ge2Sb2Te5 Alloy”

P. Jóvári, I. Kaban, S. Kohara, and M. Takata
Phys. Rev. Lett. 104, 019601 (2010)

Comment on “Formation of Large Voids in the Amorphous Phase-Change Memory Ge2Sb2Te5 Alloy”

J. Akola and R. O. Jones
Phys. Rev. Lett. 104, 019603 (2010)

See Also

Sun et al. Reply:

Zhimei Sun, Jian Zhou, Andreas Blomqvist, Börje Johansson, and Rajeev Ahuja
Phys. Rev. Lett. 104, 019604 (2010)

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Vol. 102, Iss. 7 — 20 February 2009

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